Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247 IDWD10G120C5XKSA1
- RS庫存編號:
- 222-4838
- 製造零件編號:
- IDWD10G120C5XKSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD362.00
(不含稅)
TWD380.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 88 件從 2026年6月15日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD181.00 | TWD362.00 |
| 10 - 98 | TWD176.50 | TWD353.00 |
| 100 - 248 | TWD171.00 | TWD342.00 |
| 250 - 498 | TWD168.50 | TWD337.00 |
| 500 + | TWD156.00 | TWD312.00 |
* 參考價格
- RS庫存編號:
- 222-4838
- 製造零件編號:
- IDWD10G120C5XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Silicon Carbide Diode | |
| Series | 5th Generation CoolSiCTM 1200V | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Peak Reverse Current Ir | 80μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 40.21mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Silicon Carbide Diode | ||
Series 5th Generation CoolSiCTM 1200V | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Peak Reverse Current Ir 80μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Length 40.21mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diodes generation 5 1200 V, 10 A is now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
Real two-pin package with 8.7 mm creepage and clearance distances
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