Infineon 1200 V 40 A Diode Schottky 2-Pin TO-247
- RS庫存編號:
- 222-4845
- 製造零件編號:
- IDWD40G120C5XKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 30 件)*
TWD8,532.00
(不含稅)
TWD8,958.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 210 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 60 | TWD284.40 | TWD8,532.00 |
| 90 - 120 | TWD277.10 | TWD8,313.00 |
| 150 + | TWD273.60 | TWD8,208.00 |
* 參考價格
- RS庫存編號:
- 222-4845
- 製造零件編號:
- IDWD40G120C5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | IDWD40G120C5 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 290A | |
| Maximum Operating Temperature | 175°C | |
| Length | 40.21mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series IDWD40G120C5 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 290A | ||
Maximum Operating Temperature 175°C | ||
Length 40.21mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in this package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.
No reverse recovery current, no forward recovery voltage
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
Tight forward voltage distribution
High surge current capability
相關連結
- Infineon 1200 V 40 A Diode Schottky 2-Pin TO-247 IDWD40G120C5XKSA1
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
- Infineon 1200 V 40 A Rectifier & Schottky Diode Ultrafast Recovery 2-Pin TO-247-2 IDWD40E120D7XKSA1
- Infineon 1200 V 30 A Diode Schottky 2-Pin TO-247
- Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247
- Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247
- Infineon 1200 V 10 A Diode Schottky 2-Pin TO-247
