Infineon 1200 V 20 A SiC Diode Schottky D2PAK

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小計(1 卷,共 1000 件)*

TWD151,100.00

(不含稅)

TWD158,660.00

(含稅)

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  • 2026年12月11日 發貨
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每單位
每卷*
1000 - 1000TWD151.10TWD151,100.00
2000 +TWD147.50TWD147,500.00

* 參考價格

RS庫存編號:
242-5814
製造零件編號:
IDK20G120C5XTMA1
製造商:
Infineon
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品牌

Infineon

Mount Type

Surface

Product Type

SiC Diode

Package Type

TO-263

Maximum Continuous Forward Current If

20A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

IDK20G120C5

Rectifier Type

Schottky

Maximum Forward Voltage Vf

1.8V

Peak Reverse Current Ir

123μA

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

198A

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Schottky diode generation 5 1200 V, 20 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Zero Qrr leading to no reverse recovery losses

High surge current capability

Real two-pin package with 47 mm creepage and 44 mm clearance distances

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

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