Infineon 1200 V 20 A SiC Diode Schottky D2PAK

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小計(1 卷,共 1000 件)*

TWD151,100.00

(不含稅)

TWD158,660.00

(含稅)

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  • 2026年11月02日 發貨
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單位
每單位
每卷*
1000 - 1000TWD151.10TWD151,100.00
2000 +TWD147.50TWD147,500.00

* 參考價格

RS庫存編號:
242-5814
製造零件編號:
IDK20G120C5XTMA1
製造商:
Infineon
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品牌

Infineon

Mount Type

Surface

Product Type

SiC Diode

Package Type

TO-263

Maximum Continuous Forward Current If

20A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

IDK20G120C5

Rectifier Type

Schottky

Peak Reverse Current Ir

123μA

Peak Non-Repetitive Forward Surge Current Ifsm

198A

Maximum Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon Schottky diode generation 5 1200 V, 20 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.

Zero Qrr leading to no reverse recovery losses

High surge current capability

Real two-pin package with 47 mm creepage and 44 mm clearance distances

Temperature-independent switching behaviour

Low forward voltage even at high operating temperature

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