ROHM 650 V 20 A Diode SiC Schottky 3-Pin D2PAK SCS220ANHRTRL
- RS庫存編號:
- 265-405
- 製造零件編號:
- SCS220ANHRTRL
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
TWD2,645.00
(不含稅)
TWD2,777.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD264.50 | TWD2,645.00 |
| 100 + | TWD251.20 | TWD2,512.00 |
* 參考價格
- RS庫存編號:
- 265-405
- 製造零件編號:
- SCS220ANHRTRL
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263-2L | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | SCS2 | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 260A | |
| Maximum Forward Voltage Vf | 1.55V | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263-2L | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series SCS2 | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 260A | ||
Maximum Forward Voltage Vf 1.55V | ||
Peak Reverse Current Ir 400μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM SMD silicon carbide Schottky barrier diode is optimized for automotive applications, featuring reduced switching loss for high-speed switching capabilities. Its 3-pin package includes a wide creepage distance, ensuring enhanced safety and reliability in demanding automotive environments.
AEC Q101 qualified
Low forward voltage
Temperature independent switching behaviour
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