Vishay 650 V 12 A Rectifier & Schottky Diode SiC Schottky 3-Pin D2PAK VS-3C12ET07S2L-M3
- RS庫存編號:
- 279-9462
- 製造零件編號:
- VS-3C12ET07S2L-M3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 800 件）*
TWD109,360.00
(不含稅)
TWD114,832.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 800 + | TWD136.70 | TWD109,360.00 |
* 參考價格
- RS庫存編號:
- 279-9462
- 製造零件編號:
- VS-3C12ET07S2L-M3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | eSMP | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 83A | |
| Maximum Forward Voltage Vf | 1.85V | |
| Peak Reverse Current Ir | 65μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | UL, RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series eSMP | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 83A | ||
Maximum Forward Voltage Vf 1.85V | ||
Peak Reverse Current Ir 65μA | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals UL, RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
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