Infineon 1200 V 20 A SiC Diode Schottky D2PAK IDK20G120C5XTMA1
- RS庫存編號:
- 242-5815
- 製造零件編號:
- IDK20G120C5XTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD216.00
(不含稅)
TWD226.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 439 件從 2026年4月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD216.00 |
| 10 - 99 | TWD210.00 |
| 100 - 249 | TWD206.00 |
| 250 - 499 | TWD200.00 |
| 500 + | TWD197.00 |
* 參考價格
- RS庫存編號:
- 242-5815
- 製造零件編號:
- IDK20G120C5XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Mount Type | Surface | |
| Product Type | SiC Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDK20G120C5 | |
| Rectifier Type | Schottky | |
| Peak Reverse Current Ir | 123μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 198A | |
| Maximum Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Mount Type Surface | ||
Product Type SiC Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDK20G120C5 | ||
Rectifier Type Schottky | ||
Peak Reverse Current Ir 123μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 198A | ||
Maximum Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon Schottky diode generation 5 1200 V, 20 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.
Zero Qrr leading to no reverse recovery losses
High surge current capability
Real two-pin package with 47 mm creepage and 44 mm clearance distances
Temperature-independent switching behaviour
Low forward voltage even at high operating temperature
相關連結
- Infineon 1200 V 20 A SiC Diode Schottky D2PAK
- Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247
- Infineon 1200 V 20 A SiC Diode Schottky 2-Pin TO-247 IDWD20G120C5XKSA1
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- ROHM 650 V 20 A Diode SiC Schottky 3-Pin D2PAK SCS220ANHRTRL
- Infineon 1200 V 30 A SiC Diode Schottky 2-Pin TO-247
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247