Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- RS庫存編號:
- 222-4826
- 製造零件編號:
- IDM02G120C5XTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD71,000.00
(不含稅)
TWD74,550.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD28.40 | TWD71,000.00 |
| 12500 + | TWD27.50 | TWD68,750.00 |
* 參考價格
- RS庫存編號:
- 222-4826
- 製造零件編號:
- IDM02G120C5XTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 37A | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.65mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Height | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 37A | ||
Maximum Operating Temperature 175°C | ||
Length 6.65mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Height 10.4mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
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