Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- RS庫存編號:
- 249-6927
- 製造零件編號:
- IDD10SG60CXTMA2
- 製造商:
- Infineon
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可享批量折扣
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TWD157.00
(不含稅)
TWD164.85
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年9月21日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD157.00 |
| 10 - 99 | TWD141.00 |
| 100 - 249 | TWD128.00 |
| 250 - 499 | TWD113.00 |
| 500 + | TWD102.00 |
* 參考價格
- RS庫存編號:
- 249-6927
- 製造零件編號:
- IDD10SG60CXTMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | SiC Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Diode Configuration | Single | |
| Series | XDD10SG60 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 860μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Peak Reverse Recovery Time trr | 10ns | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type SiC Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Diode Configuration Single | ||
Series XDD10SG60 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 860μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Peak Reverse Recovery Time trr 10ns | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
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