Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

RS庫存編號:: 831-2853
製造零件編號:: IRF640NSTRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD339.00

(不含稅)

TWD356.00

訂單超過 $1,300.00 免費送貨

有庫存

60 件準備從其他地點送貨
加上 960 件從 2026年1月08日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
10 - 190	TWD33.90	TWD339.00
200 +	TWD31.40	TWD314.00

* 參考價格

RS庫存編號:: 831-2853
製造零件編號:: IRF640NSTRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	150W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	67nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	9.65 mm
	Standards/Approvals	No
	Length	10.67mm
	Height	4.83mm
	Distrelec Product Id	304-44-448
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 150W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 67nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 9.65 mm
	Standards/Approvals No
	Length 10.67mm
	Height 4.83mm
	Distrelec Product Id 304-44-448
	Automotive Standard No

COO (Country of Origin):: KR

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NSTRLPBF

This MOSFET is essential for efficient power management across various applications, controlling electrical current flow in circuits to ensure performance and reliability. Its robust specifications make it particularly suitable for automation and electronic systems in contemporary electronics.

Features & Benefits

• N-channel configuration supports enhancement mode operation

• Maximum continuous drain current of 18A

• Peak drain-source voltage of 200V for diverse applications

• D2PAK package designed for surface mount convenience

• Low Rds(on) of 150mΩ reduces energy loss during operation

• High maximum operating temperature of +175°C for various environments

Applications

• Power management in automotive electronics

• Industrial power supplies for automation systems

• Motor control across different sectors

• Renewable energy systems for energy conversion

• High-frequency power inverter designs

What is the maximum drain-source voltage?

The maximum drain-source voltage rating is 200V, providing flexibility for high-voltage applications.

How is heat dissipation managed during operation?

This MOSFET offers a power dissipation capability of 150W, and its package design promotes effective heat management under high loads.

What are the implications of the gate threshold voltage range?

With a maximum gate threshold voltage of 4V and a minimum of 2V, it offers engineers a versatile range for switching applications.

Can this component be used in parallel configurations?

Yes, it can be easily paralleled due to its low on-resistance, making it suitable for high current applications.

How should it be soldered for optimal performance?

The soldering temperature should not exceed 300°C for 10 seconds to ensure proper installation without damaging the MOSFET.