Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF
- RS庫存編號:
- 688-6939
- Distrelec 貨號:
- 304-43-452
- 製造零件編號:
- IRFB4020PBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD350.00
(不含稅)
TWD367.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 130 件從 2026年8月10日 起發貨
- 加上 445 件從 2026年8月17日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD70.00 | TWD350.00 |
| 15 - 20 | TWD68.80 | TWD344.00 |
| 25 + | TWD63.80 | TWD319.00 |
* 參考價格
- RS庫存編號:
- 688-6939
- Distrelec 貨號:
- 304-43-452
- 製造零件編號:
- IRFB4020PBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Length 10.66mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - IRFB4020PBF
This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where robust thermal endurance is required. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical solution for discrete power stages and board-mounted switching circuits across a wide temperature range.
Features and Benefits:
• 200V drain rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery
Applications
• Suitable for motor-drive half-bridge stages
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments
What gate-voltage limits should designers observe for safe operation?
The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and to maintain reliable switching behaviour.
How does the device perform across temperature extremes?
It is rated to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation while maintaining specified electrical characteristics.
What package considerations affect PCB layout and cooling?
The TO-220 through-hole form factor provides a single insulated mounting tab and allows direct attachment to a heatsink or chassis for improved thermal management.
How does the body diode influence switching-topology choice?
The intrinsic diode with a 1.3V forward drop should be accounted for in designs with reverse-recovery events to manage dissipation and determine snubber requirements.
相關連結
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF640NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220