N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF
- RS庫存編號:
- 919-4817
- 製造零件編號:
- IRF640NPBF
- 製造商:
- Infineon
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可供預購。
單價（不含稅） 毎管：50 個
TWD45.40
(不含稅)
TWD47.67
(含稅)
| 單位 | Per unit | Per Tube* |
| 50 - 50 | TWD45.40 | TWD2,270.00 |
| 100 - 150 | TWD44.40 | TWD2,220.00 |
| 200 + | TWD43.40 | TWD2,170.00 |
| * 參考價格 | ||
- RS庫存編號:
- 919-4817
- 製造零件編號:
- IRF640NPBF
- 製造商:
- Infineon
- COO (Country of Origin):
- MX
法例與合規
- COO (Country of Origin):
- MX
產品詳細資訊
N-Channel Power MOSFET 150V to 600V, Infineon
規格
| 屬性 | 值 |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V |
| Transistor Material | Si |
| Series | HEXFET |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |