製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220

RS庫存編號:: 262-6756
製造零件編號:: IRFI4227PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 管，共 2000 件）*

TWD118,000.00

(不含稅)

TWD123,900.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月08日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
2000 +	TWD59.00	TWD118,000.00

* 參考價格

RS庫存編號:: 262-6756
製造零件編號:: IRFI4227PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.036Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.036Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFI4227PBF

The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

150 degree Celsius operating junction temperature

High repetitive peak current capability

Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220

訂單超過 $1,300.00 免費送貨

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