Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

RS庫存編號:: 913-3932
製造零件編號:: IRFB4227PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 管，共 50 件）*

TWD2,320.00

(不含稅)

TWD2,436.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

900 件從 2026年1月15日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
50 - 50	TWD46.40	TWD2,320.00
100 - 150	TWD45.40	TWD2,270.00
200 +	TWD42.10	TWD2,105.00

* 參考價格

RS庫存編號:: 913-3932
製造零件編號:: IRFB4227PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	330W
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Standards/Approvals	No
	Width	4.82 mm
	Height	9.02mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 330W
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Standards/Approvals No
	Width 4.82 mm
	Height 9.02mm
	Automotive Standard No

COO (Country of Origin):: CN

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