Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF

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TWD1,520.00

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TWD1,596.00

(含稅)

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50 - 50TWD30.40TWD1,520.00
100 - 150TWD29.80TWD1,490.00
200 +TWD29.20TWD1,460.00

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RS庫存編號:
124-9009
製造零件編號:
IRFB5620PBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

14W

Typical Gate Charge Qg @ Vgs

25nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
MX

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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