Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

RS庫存編號:: 827-3944
製造零件編號:: IRFB38N20DPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 包，共 5 件）*

TWD436.00

(不含稅)

TWD457.80

訂單超過 $1,300.00 免費送貨

有庫存

45 件準備從其他地點送貨
加上 20 件從 2026年1月28日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
5 +	TWD87.20	TWD436.00

* 參考價格

RS庫存編號:: 827-3944
製造零件編號:: IRFB38N20DPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	54mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	60nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	300W
	Maximum Operating Temperature	175°C
	Height	16.51mm
	Length	10.67mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 54mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 60nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 300W
	Maximum Operating Temperature 175°C
	Height 16.51mm
	Length 10.67mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF

This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.

Features & Benefits

• Supports a maximum continuous drain current of 43A

• Provides a low Rds(on) of 54mΩ to minimise energy loss

• Capable of withstanding drain-source voltages up to 200V

• High operating temperature tolerance ranging from -55°C to +175°C

• Designed for high-speed switching applications with low gate charge

• Integrates effectively into DC-DC converters and power supplies

Applications

• Utilised in high-frequency DC-DC converters for efficient power management

• Suitable for in plasma display panels

• Employed in industrial automation systems requiring consistent switching

• Used in power supplies where thermal efficiency is crucial

• Ideal for electronic designs needing high performance at elevated temperatures

What kind of currents can it handle in high-temperature applications?

It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.

How does this component perform in high-frequency applications?

It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.

What packaging options are available for this product?

It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.

Can this be used in conjunction with other power management devices?

Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.

What measures should be taken for installation?

Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.