Infineon HEXFET Type N-Channel MOSFET, 43 A, 100 V Enhancement, 3-Pin TO-220
- RS庫存編號:
- 165-5783
- 製造零件編號:
- IRFI4410ZPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,455.00
(不含稅)
TWD2,578.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 200 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 200 | TWD49.10 | TWD2,455.00 |
| 250 + | TWD42.00 | TWD2,100.00 |
* 參考價格
- RS庫存編號:
- 165-5783
- 製造零件編號:
- IRFI4410ZPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 47W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.13mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Length | 10.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 47W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 16.13mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Length 10.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
相關連結
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI4410ZPBF
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3806PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRF3415PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
- Infineon HEXFET Type N-Channel MOSFET 43 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 43 V Enhancement, 3-Pin TO-247 IRFP3415PBF