Infineon HEXFET Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-263 IRFS3806TRLPBF

RS庫存編號:: 827-4101
製造零件編號:: IRFS3806TRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-263 IRFS3806TRLPBF

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RS庫存編號:: 827-4101
製造零件編號:: IRFS3806TRLPBF
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	43A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	15.8mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	71W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	4.83mm
	Length	10.67mm
	Width	9.65 mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 43A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 15.8mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 71W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 4.83mm
	Length 10.67mm
	Width 9.65 mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF

This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.

Features & Benefits

• High continuous drain current capability of up to 43A

• Efficient operation with a maximum drain-source voltage of 60V

• Low on-resistance reduces power loss

• High-temperature application suitability with a range up to +175°C

• Space-saving surface mount design

• Enhanced ruggedness against dynamic stress for consistent performance

Applications

• Ideal for high-speed power switching scenarios

• Used in uninterruptible power supply systems

• Applicable in synchronous rectification within switched-mode power supplies

• Suitable for hard-switched and high-frequency circuits

What is the maximum gate-to-source voltage?

The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.

How does the on-resistance affect power dissipation?

Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.

What is the typical gate charge required?

The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.

Is it compatible with surface mount PCB designs?

Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into Compact electronic devices.

What factors should be considered when using the MOSFET in high-temperature applications?

When operating at high temperatures, ensure adequate thermal management is implemented to respect the maximum operating temperature limit of +175°C for reliability.