N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF
- RS庫存編號:
- 541-0014
- 製造零件編號:
- IRF640NPBF
- 製造商:
- Infineon
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61 "將在 2 工作日發貨 （本地庫存） "
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單價（不含稅） 個
TWD44.00
(不含稅)
TWD46.20
(含稅)
| 單位 | Per unit |
| 1 - 12 | TWD44.00 |
| 13 - 24 | TWD43.00 |
| 25 + | TWD42.00 |
- RS庫存編號:
- 541-0014
- 製造零件編號:
- IRF640NPBF
- 製造商:
- Infineon
法例與合規
產品詳細資訊
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
| 屬性 | 值 |
| Channel Type | N |
| Maximum Continuous Drain Current | 18 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 67 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
| Height | 8.77mm |