N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF
- RS庫存編號:
- 541-0014
- 製造零件編號:
- IRF640NPBF
- 製造商:
- Infineon
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3 現貨庫存,次日發貨。
單價(不含稅) 個
TWD51.00
(不含稅)
TWD53.55
(含稅)
單位 | Per unit |
1 - 12 | TWD51.00 |
13 - 24 | TWD50.00 |
25 + | TWD49.00 |
- RS庫存編號:
- 541-0014
- 製造零件編號:
- IRF640NPBF
- 製造商:
- Infineon
法例與合規
產品詳細資訊
N-Channel Power MOSFET 150V to 600V, Infineon
規格
屬性 | 值 |
Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 150 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 67 nC @ 10 V |
Transistor Material | Si |
Height | 8.77mm |
Minimum Operating Temperature | -55 °C |
Series | HEXFET |