Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRF640NPBF

RS庫存編號:: 541-0014
Distrelec 貨號:: 303-41-285
製造零件編號:: IRF640NPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRF640NPBF

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RS庫存編號:: 541-0014
Distrelec 貨號:: 303-41-285
製造零件編號:: IRF640NPBF
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	150W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	67nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Height	8.77mm
	Length	10.67mm
	Automotive Standard	No
	Distrelec Product Id	30341285

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 150W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 67nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Height 8.77mm
	Length 10.67mm
	Automotive Standard No
	Distrelec Product Id 30341285

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF

This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.

Features & Benefits

• Continuous drain current up to 18A for robust power handling

• Operates effectively at voltage levels up to 200V for increased versatility

• Low on-resistance minimises energy loss during operation

• Simplified drive requirements facilitate integration into circuits

• Fully avalanche rated for enhanced safety and performance

Applications

• Utilised in power supply circuits for industrial automation

• Suitable for motor control in robotics

• Ideal for renewable energy systems such as solar inverters

• Employed in power switching systems for electrical equipment

• Utilised in amplification stages for audio equipment

How does temperature affect the performance?

The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.

What is the significance of the maximum gate-source voltage?

The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.

Can this component handle sudden voltage spikes?

Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.

What is the impact of on-resistance on overall efficiency?

Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.

Is it suitable for surface mount applications?

The TO-220AB package is specifically designed for through-hole mounting, ensuring effective heat dissipation rather than surface mounting.