Infineon HEXFET Type N-Channel MOSFET, 62 A, 200 V TO-263
- RS庫存編號:
- 257-9430
- 製造零件編號:
- IRFS4227TRLPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 257-9430
- 製造零件編號:
- IRFS4227TRLPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFS series is the 200V single n channel HEXFET power mosfet PDP Switch in a D2 Pak package.
Advanced process technology
Key parameters optimized for PDP sustain, energy recovery and pass switch applications
Low E pulse rating to reduce power
Dissipation in PDP sustain, energy recovery and pass switch applications
Low QG for fast response
High repetitive peak current capability for
Reliable operation
Short fall & rise times for fast switching
175°C operating junction temperature for improved ruggedness
Repetitive avalanche capability for robustness and reliability
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