Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF
- RS庫存編號:
- 830-3326
- 製造零件編號:
- IRLMS2002TRPBF
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 包,共 30 件)*
TWD267.00
(不含稅)
TWD280.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 780 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 30 + | TWD8.90 | TWD267.00 |
* 參考價格
- RS庫存編號:
- 830-3326
- 製造零件編號:
- IRLMS2002TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | Micro6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Length | 3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type Micro6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Length 3mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- TH
Infineon HEXFET Series MOSFET, 6.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRLMS2002TRPBF
This N-channel MOSFET is designed for effective performance in battery management and load management applications. Its Ability to provide low on-resistance alongside high temperature resilience contributes to efficient operation across diverse electronic systems. With state-of-the-art processing techniques, this product is Ideal for professionals in the automation, electronics, and electrical sectors.
Features & Benefits
• Surface mount design minimises PCB space usage
• Low on-resistance enhances power efficiency
• Continuous drain current capability of up to 6.5A
• Supports ±12V gate-to-source voltage for flexible control
• Efficient thermal performance reduces heat generation
Applications
• Battery management for optimal energy distribution
• Load management in various electronic devices
• Automotive requiring robust power handling
• High-efficiency power supply systems
• Renewable energy systems for energy regulation
What is the maximum continuous drain current at elevated temperatures?
At a temperature of 70°C, a continuous drain current of 5.2A can be achieved while maintaining stability under specified conditions.
What is the thermal resistance for effective performance?
The maximum junction-to-ambient thermal resistance is 62.5°C/W, ensuring effective heat dissipation during operation.
How do I ensure optimum performance during installation?
Proper thermal management and careful consideration of PCB layout are essential for optimal performance, allowing for efficient heat dissipation and reliability.
What voltage can be applied without risking breakdown?
The maximum drain-source voltage is 20V, which serves as a critical threshold to prevent unnecessary breakdown during operation.
Is there a specific thermal derating factor to consider?
Yes, the linear derating factor is 0.016W/°C, indicating that power dissipation must be adjusted based on ambient temperature to maintain reliability.
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