Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 6-Pin Micro6

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RS庫存編號:
262-6785
製造零件編號:
IRLMS1503TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

Micro6

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

200mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.7W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

6.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Ultra low Rds

N-channel

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