Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 6-Pin Micro6 IRLMS1503TRPBF
- RS庫存編號:
- 262-6786
- Distrelec 貨號:
- 304-41-683
- 製造零件編號:
- IRLMS1503TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD525.00
(不含稅)
TWD551.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 50 | TWD10.50 | TWD525.00 |
| 100 - 200 | TWD9.50 | TWD475.00 |
| 250 - 450 | TWD9.30 | TWD465.00 |
| 500 - 950 | TWD8.60 | TWD430.00 |
| 1000 + | TWD8.40 | TWD420.00 |
* 參考價格
- RS庫存編號:
- 262-6786
- Distrelec 貨號:
- 304-41-683
- 製造零件編號:
- IRLMS1503TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | Micro6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type Micro6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is combined with the fast switching speed and ruggedized device design that power MOSFET well known for, provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Ultra low Rds
N-channel
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