Infineon HEXFET Dual N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC IRF7313PBF

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RS庫存編號:
541-0250
製造零件編號:
IRF7313PBF
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Width

4mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Dual N-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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