Infineon HEXFET Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303PBF
- RS庫存編號:
- 540-9862
- 製造零件編號:
- IRF7303PBF
- 製造商:
- Infineon
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TWD36.00
(不含稅)
TWD37.80
(含稅)
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD36.00 |
| 10 - 49 | TWD26.00 |
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| 250 + | TWD20.00 |
** 參考價格
- RS庫存編號:
- 540-9862
- 製造零件編號:
- IRF7303PBF
- 製造商:
- Infineon
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF
This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.
Features & Benefits
• Enhanced efficiency with a low Rds(on) of 80 mΩ
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs
Applications
• Used in power supply circuits for voltage regulation
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance
What is the maximum gate-source voltage for this device?
The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.
How does the Rds(on) value affect efficiency?
A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.
Can it operate at extreme temperatures?
Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.
What type of circuit boards is this compatible with?
It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.9 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 50 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Width | 4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |