Infineon HEXFET Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303PBF

RS庫存編號:: 540-9862
製造零件編號:: IRF7303PBF
製造商:: Infineon

Infineon HEXFET Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303PBF

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TWD36.00

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TWD37.80

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RS庫存編號:: 540-9862
製造零件編號:: IRF7303PBF
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	4.9 A
	Maximum Drain Source Voltage	30 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	50 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2 W
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	25 nC @ 10 V
	Length	5mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Width	4mm
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	選取全部
	品牌 Infineon
	Channel Type N
	Maximum Continuous Drain Current 4.9 A
	Maximum Drain Source Voltage 30 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 50 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2 W
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 25 nC @ 10 V
	Length 5mm
	Number of Elements per Chip 2
	Transistor Material Si
	Width 4mm
	Minimum Operating Temperature -55 °C
	Height 1.5mm

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF

This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

Features & Benefits

• Enhanced efficiency with a low Rds(on) of 80 mΩ

• High power dissipation capability with a maximum of 2W

• Dual-channel integration for increased functionality in designs

• Robust thermal operation up to +150°C for versatile applications

• Optimised for enhancement mode operation to improve energy management

• Compact SOIC package facilitates easy integration into modern PCBs

Applications

• Used in power supply circuits for voltage regulation

• Employed in motor control systems for efficient operation

• Suitable for lighting requiring robust switching

• Integrated into consumer electronics for improved power efficiency

• Ideal for automotive systems that require dependable performance

What is the maximum gate-source voltage for this device?

The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

How does the Rds(on) Value affect efficiency?

A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Can it operate at extreme temperatures?

Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

What type of circuit boards is this compatible with?

It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

How should one approach the installation of this component?

Care should be taken to use appropriate soldering techniques to avoid heat damage and ensure a secure fit on the PCB.