Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 826-9412
- 製造零件編號:
- BSS316NH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 250 件）*
TWD1,025.00
(不含稅)
TWD1,075.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 500 件從 2026年8月10日 起發貨
- 加上 2,750 件從 2026年8月14日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 250 - 500 | TWD4.10 | TWD1,025.00 |
| 750 - 1250 | TWD4.00 | TWD1,000.00 |
| 1500 + | TWD3.90 | TWD975.00 |
* 參考價格
- RS庫存編號:
- 826-9412
- 製造零件編號:
- BSS316NH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 2 Series MOSFET, 30V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS316NH6327XTSA1
This n-channel MOSFET is a surface-mount switching transistor designed for low-voltage power management in compact electronic assemblies. It operates as an enhancement-mode device suitable for switching and control tasks in automotive and industrial contexts, with a gate-source voltage rating that enables robust drive margins for typical control circuits.
Features and Benefits:
• Low on-resistance delivers efficient conduction and reduced losses
• 30V drain-source rating supports common low-voltage systems
• 1.4A continuous current capability handles moderate loads
• 0.6nC typical gate charge enables fast switching transitions
• 500mW maximum power dissipation suits tight thermal budgets
• AEC‑Q101 qualification provides automotive-grade reliability criteria
• 30V drain-source rating supports common low-voltage systems
• 1.4A continuous current capability handles moderate loads
• 0.6nC typical gate charge enables fast switching transitions
• 500mW maximum power dissipation suits tight thermal budgets
• AEC‑Q101 qualification provides automotive-grade reliability criteria
Applications
• Suitable for low-voltage automotive load switching
• Ideal for point-of-load conversion in compact electronics
• Used with battery-powered systems requiring small form factor
• Can be used for motor-drive gate control in small actuators
• Suitable for power management on densely populated boards
• Ideal for point-of-load conversion in compact electronics
• Used with battery-powered systems requiring small form factor
• Can be used for motor-drive gate control in small actuators
• Suitable for power management on densely populated boards
What thermal range can it withstand during operation?
It is specified to operate from -55°C up to 150°C, allowing use across wide temperature environments.
How many electrical connections does it present to the board?
It uses a three-pin configuration compatible with standard SOT-23 land patterns for surface mounting.
What maximum voltage should be applied between gate and source?
The gate-to-source rating is 20V, which defines the safe maximum gate-drive amplitude.
What package height and footprint considerations affect layout?
The package has a low profile with a height of 0.9mm and rectangular footprint sizing of 2.9x1.3mm for compact PCB designs.
相關連結
- Infineon OptiMOS 2 Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS316NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6433XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1