Infineon OptiMOS Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 124-9035
- 製造零件編號:
- 2N7002H6327XTSA2
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD5,400.00
(不含稅)
TWD5,670.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 24,000 件從 2026年8月13日 起裝運發貨
- 加上 24,000 件從 2026年8月20日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD1.80 | TWD5,400.00 |
| 6000 - 27000 | TWD1.70 | TWD5,100.00 |
| 30000 + | TWD1.70 | TWD5,100.00 |
* 參考價格
- RS庫存編號:
- 124-9035
- 製造零件編號:
- 2N7002H6327XTSA2
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.4nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.4nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 60V Maximum Drain Source Voltage, 4Ω Maximum Drain Source Resistance - 2N7002H6327XTSA2
This small-signal N-channel enhancement MOSFET is designed for high-speed switching in surface-mount applications. It operates across a wide ambient range and provides a compact switching element for low-current circuits where controlled conduction and fast gate response are required.
Features and Benefits:
• 60V drain-source rating enables higher-voltage switching
• 4Ω maximum Rds(on) reduces conduction losses at low currents
• 300mA continuous drain current supports small-signal loads
• 0.4nC typical gate charge yields rapid switching transitions
• 20V gate-source tolerance allows flexible drive voltages
• 500mW power dissipation manages thermal load in compact layouts
• 4Ω maximum Rds(on) reduces conduction losses at low currents
• 300mA continuous drain current supports small-signal loads
• 0.4nC typical gate charge yields rapid switching transitions
• 20V gate-source tolerance allows flexible drive voltages
• 500mW power dissipation manages thermal load in compact layouts
Applications
• Suitable for level-shifting and signal switching in control units
• Ideal for battery-powered sensor interface circuits
• Used with small relays and transistor-replacement switching
• Can be used for protection circuitry in consumer electronics
• Suitable for compact power-management modules on boards
• Ideal for battery-powered sensor interface circuits
• Used with small relays and transistor-replacement switching
• Can be used for protection circuitry in consumer electronics
• Suitable for compact power-management modules on boards
What package type should I expect for board layout planning?
It is supplied in a SOT-23 surface-mount package, easing placement on dense boards.
How does temperature influence operational capability?
It is specified to function from -55°C up to 150°C, allowing use across harsh and elevated-temperature environments.
What mechanical footprint dimensions matter for component spacing?
The component measures 2.9 x 1.3 x 1mm, useful when calculating clearance and neighbouring component placement.
How many terminals are available for schematic and routing?
The device has three pins consistent with single-channel MOSFET topology for straightforward routing.
相關連結
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