N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Infineon 2N7002H6327XTSA2
- RS庫存編號:
- 124-9035
- 製造零件編號:
- 2N7002H6327XTSA2
- 製造商:
- Infineon
72000 現貨庫存，可於6工作日發貨。
已增加
單價（不含稅） 個 (在毎卷：3000)
TWD1.70
(不含稅)
TWD1.78
(含稅)
| 單位 | Per unit | Per Reel* |
| 3000 - 3000 | TWD1.70 | TWD5,100.00 |
| 6000 - 27000 | TWD1.60 | TWD4,800.00 |
| 30000 + | TWD1.40 | TWD4,200.00 |
| * 參考價格 | ||
- RS庫存編號:
- 124-9035
- 製造零件編號:
- 2N7002H6327XTSA2
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
規格
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Series | OptiMOS |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 2.9mm |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |