Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- RS庫存編號:
- 178-7474
- 製造零件編號:
- BSS670S2LH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 卷,共 3000 件)*
TWD7,800.00
(不含稅)
TWD8,190.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 9,000 件從 2026年8月10日 起裝運發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD2.60 | TWD7,800.00 |
| 6000 - 27000 | TWD2.50 | TWD7,500.00 |
| 30000 + | TWD2.20 | TWD6,600.00 |
* 參考價格
- RS庫存編號:
- 178-7474
- 製造零件編號:
- BSS670S2LH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 825mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 825mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 540mA Continuous Drain Current - BSS670S2LH6327XTSA1
This MOSFET is a small-signal N-channel transistor designed for surface-mounted switching in compact electronic systems. It is intended for applications that require controlled enhancement-mode switching with moderate voltage and current ratings, and is qualified for automotive environments.
Features and Benefits:
• 55V drain tolerance enables higher-voltage switching circuits
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments
• 825mΩ low RDS(on) minimises conduction losses in low-current paths
• 540mA continuous drain current supports steady-state loads
• 1.7nC typical gate charge allows efficient high-speed switching
• 360mW power dissipation suits modest thermal budgets
• -55°C to 150°C operating range accommodates wide-temperature environments
Applications
• Suitable for automotive sensor-interface switching
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards
• Ideal for DC load switching in compact modules
• Used with battery-management auxiliary circuits
• Can be used for gate drivers in low-power converters
• Used for signal-level switching on mixed-signal boards
What mounting considerations apply to small packages?
The device is supplied in a three-pin SOT-23 package intended for surface mounting, so land-pattern thermal relief and solder fillets should be planned to manage its 360mW dissipation.
How does gate drive affect switching performance?
Driving the gate up to 20V increases conduction margin, while the 1.7nC gate charge determines required driver current for desired rise/fall times.
What is the devices behaviour under continuous load?
It can carry up to 540mA continuously, provided thermal constraints are respected and ambient conditions allow sufficient heat transfer.
Is this component suitable for automotive qualification needs?
It meets AEC‑Q101 requirements, making it appropriate for automotive electronic applications that require that standard.
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-223
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6433XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1
