Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1
- RS庫存編號:
- 165-5862
- 製造零件編號:
- BSS123NH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 卷,共 3000 件)*
TWD7,500.00
(不含稅)
TWD7,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 6,000 件從 2026年8月10日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD2.50 | TWD7,500.00 |
| 6000 - 27000 | TWD2.50 | TWD7,500.00 |
| 30000 + | TWD2.40 | TWD7,200.00 |
* 參考價格
- RS庫存編號:
- 165-5862
- 製造零件編號:
- BSS123NH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
不適用
- COO (Country of Origin):
- CN
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 10Ω Maximum Drain Source Resistance - BSS123NH6327XTSA1
This MOSFET is a surface-mount N-channel enhancement transistor designed for switching and control tasks in compact electronic assemblies. It is intended for use across a wide thermal range and in applications where low switching charge and conservative current handling are required. The device is supplied in a SOT-23 package for straightforward PCB mounting and is suitable for environments that demand automotive-grade component robustness.
Features and Benefits:
• 100V drain-source rating enables high-voltage switching capability
• 10Ω Rds(on) simplifies low-power protection and current limiting
• 0.6nC typical gate charge minimises switching losses
• 190mA continuous drain current supports light-load control
• 20V gate voltage rating allows compatibility with common drive levels
• 500mW power dissipation handles modest thermal loads
• 10Ω Rds(on) simplifies low-power protection and current limiting
• 0.6nC typical gate charge minimises switching losses
• 190mA continuous drain current supports light-load control
• 20V gate voltage rating allows compatibility with common drive levels
• 500mW power dissipation handles modest thermal loads
Applications
• Suitable for battery management sensing circuits
• Ideal for low-current load switching in control modules
• Used with level-shift interfaces in mixed-voltage systems
• Can be used for signal isolation in automotive peripherals
• Appropriate for thermal-limited power distribution networks
• Ideal for low-current load switching in control modules
• Used with level-shift interfaces in mixed-voltage systems
• Can be used for signal isolation in automotive peripherals
• Appropriate for thermal-limited power distribution networks
What temperature conditions can it withstand in operation?
It operates across a broad range from -55°C up to 150°C, permitting use in both cold-start and high-heat environments.
What mounting and pin configuration does it use?
It is supplied as a three-pin SOT-23 surface-mount package, optimised for automated PCB assembly and small form-factor layouts.
How does its construction influence selection for automotive projects?
The device meets an automotive stress test standard, making it suitable where components must tolerate automotive qualification requirements.
How should thermal dissipation be managed on a PCB?
With a 500mW dissipation limit, designers should provide adequate copper area or thermal vias to spread heat and maintain junction temperatures within safe limits.
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS123NH6433XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
