Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 827-0096
製造零件編號:: BSS806NH6327XTSA1
製造商:: Infineon

Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23

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TWD900.00

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單位	每單位	每卷*
250 - 500	TWD3.60	TWD900.00
750 - 1250	TWD3.50	TWD875.00
1500 +	TWD3.30	TWD825.00

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RS庫存編號:: 827-0096
製造零件編號:: BSS806NH6327XTSA1
製造商:: Infineon

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS 2
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	500mW
	Forward Voltage Vf	0.82V
	Typical Gate Charge Qg @ Vgs	1.7nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.3 mm
	Standards/Approvals	No
	Height	1mm
	Length	2.9mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS 2
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 500mW
	Forward Voltage Vf 0.82V
	Typical Gate Charge Qg @ Vgs 1.7nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.3 mm
	Standards/Approvals No
	Height 1mm
	Length 2.9mm
	Automotive Standard AEC-Q101

Infineon OptiMOS™ 2 Series MOSFET, 2.3A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS806NH6327XTSA1

This MOSFET is tailored for efficient power management in various electronic applications, supporting a maximum continuous drain current of 2.3A and a maximum drain source voltage of 20V. Its low resistance features help to minimise energy losses, making it suitable for applications that require a high level of confidence under stringent conditions.

Features & Benefits

• N-channel configuration enhances switching performance

• Enhancement mode reduces off-state leakage

• Ultra logic level compatibility suitable for 1.8V applications

• Integrated avalanche rating improves robustness under stress

• AEC-Q101 qualified for automotive applications ensures long-lasting performance

• Surface mount design enables straightforward integration into compact circuitry

Applications

• Ideal for power management in automotive electronics

• Utilised for driving low-voltage loads in automation systems

• Suitable for switching in power supplies

• Designed for high temperature operating environments

Can it be used in automotive applications?

Yes, it is AEC-Q101 qualified, ensuring its suitability for automotive environments.

What is the operating temperature range?

The operating temperature range is between -55°C and +150°C.

How does its RDS(on) value impact circuit performance?

A low RDS(on) value reduces power loss during operation, enhancing overall efficiency.

What is the significance of its gate threshold voltage?

The gate threshold voltage indicates when the MOSFET begins conducting, which is vital for controlling switch timing.

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.