Infineon OptiMOS 2 N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NEH6327XTSA1
- RS庫存編號:
- 165-5871
- 製造零件編號:
- BSS806NEH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD7,500.00
(不含稅)
TWD7,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9,000 件從 2026年9月21日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD2.50 | TWD7,500.00 |
| 15000 + | TWD2.40 | TWD7,200.00 |
* 參考價格
- RS庫存編號:
- 165-5871
- 製造零件編號:
- BSS806NEH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3mm | |
| Height | 1mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Operating Temperature 150°C | ||
Width 1.3mm | ||
Height 1mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSS806NEH6327XTSA1
This MOSFET is a small-signal N-channel enhancement device designed for surface-mount applications where compact switching performance is required. It is suitable for use in low-voltage power stages and control circuits across a broad temperature range, offering functionality that supports both consumer and automotive electronics environments.
Features and Benefits:
• Low on-resistance 82mΩ reduces conduction losses and heat
• 20V drain-source rating enables safe low-voltage switching
• 2.3A continuous current supports moderate load currents
• 1.7nC gate charge enables quick gate-drive transitions
• 500mW power dissipation limits thermal stress in tight layouts
• Gate tolerated up to 8V for flexible drive voltages
• 20V drain-source rating enables safe low-voltage switching
• 2.3A continuous current supports moderate load currents
• 1.7nC gate charge enables quick gate-drive transitions
• 500mW power dissipation limits thermal stress in tight layouts
• Gate tolerated up to 8V for flexible drive voltages
Applications
• Suitable for battery management and power distribution modules
• Ideal for DC-DC converters in compact assemblies
• Used with microcontroller outputs for low-voltage switching
• Can be used for load switching in automotive electronics
• Used for signal-level power control in embedded systems
• Ideal for DC-DC converters in compact assemblies
• Used with microcontroller outputs for low-voltage switching
• Can be used for load switching in automotive electronics
• Used for signal-level power control in embedded systems
What package and mounting style does it use?
It comes in a SOT-23 package designed for surface mounting to save board space and simplify automated placement.
What temperature conditions can it withstand during operation?
It operates across a wide thermal interval from -55°C up to 150°C to accommodate harsh environments and elevated junction temperatures.
How many pins are available and what is the channel type?
There are three pins and the device uses an N-channel conduction path configured in enhancement mode.
What is the typical forward/bulk diode characteristic?
The device exhibits a forward voltage of 0.82V across its intrinsic diode under typical conduction conditions.
相關連結
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS806NH6327XTSA1
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML9303TRPBF
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002H6327XTSA2