Vishay Si7121DN Type P-Channel MOSFET, 9.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SI7121DN-T1-GE3
- RS庫存編號:
- 818-1380
- 製造零件編號:
- SI7121DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD384.00
(不含稅)
TWD403.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,740 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD38.40 | TWD384.00 |
| 750 - 1490 | TWD37.60 | TWD376.00 |
| 1500 + | TWD37.00 | TWD370.00 |
* 參考價格
- RS庫存編號:
- 818-1380
- 製造零件編號:
- SI7121DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | Si7121DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 27.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series Si7121DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 27.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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