Vishay Single D Series Type N-Channel MOSFET, 3 A, 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3
- RS庫存編號:
- 787-9143
- 製造零件編號:
- SIHD3N50D-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD121.00
(不含稅)
TWD127.05
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD24.20 | TWD121.00 |
| 50 - 245 | TWD21.40 | TWD107.00 |
| 250 - 995 | TWD16.40 | TWD82.00 |
| 1000 - 2995 | TWD14.40 | TWD72.00 |
| 3000 + | TWD13.60 | TWD68.00 |
* 參考價格
- RS庫存編號:
- 787-9143
- 製造零件編號:
- SIHD3N50D-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 | |
| Series | D Series | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30, -30V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 | ||
Series D Series | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30, -30V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.38mm | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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