製造零件編號

Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3

RS庫存編號:: 200-6828
製造零件編號:: SIHD690N60E-GE3
製造商:: Vishay

Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD75,900.00

(不含稅)

TWD79,680.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月01日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD25.30	TWD75,900.00
6000 +	TWD24.50	TWD73,500.00

* 參考價格

RS庫存編號:: 200-6828
製造零件編號:: SIHD690N60E-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.4A
	Maximum Drain Source Voltage Vds	650V
	Series	E
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.4A
	Maximum Drain Source Voltage Vds 650V
	Series E
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Document- SIHD690N60E-GE3

The Vishay SIHD690N60E-GE3 is a E Series power MOSFET.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Vishay E Type N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3

訂單超過 $1,300.00 免費送貨

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