Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- RS庫存編號:
- 188-4982
- Distrelec 貨號:
- 304-38-847
- 製造零件編號:
- SIHD2N80AE-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD279.00
(不含稅)
TWD293.00
(含稅)
訂單超過 $1,300.00 免費送貨
有限的庫存
- 1,400 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 490 | TWD27.90 | TWD279.00 |
| 500 - 990 | TWD27.00 | TWD270.00 |
| 1000 + | TWD26.80 | TWD268.00 |
* 參考價格
- RS庫存編號:
- 188-4982
- Distrelec 貨號:
- 304-38-847
- 製造零件編號:
- SIHD2N80AE-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Width | 6.22mm | |
| Height | 2.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Width 6.22mm | ||
Height 2.25mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 2.9A Maximum Continuous Drain Current - SIHD2N80AE-GE3
This power MOSFET is a high-voltage switching transistor intended for use in industrial and electronics systems where robust voltage handling and thermal endurance are required. It operates as an enhancement-mode N-channel device designed for surface-mount installation and is suited to power conversion and control tasks in automation and electrical equipment.
Features and Benefits:
• 800V rating enables high-voltage switching in Compact designs • 2.9A continuous drain current supports moderate load currents • 7nC typical gate charge for efficient gate-drive energy management • 2.9Ω Rds(on) limits conduction losses under light-to-moderate loads • 62.5W power dissipation allows sustained thermal loading • -55°C to 150°C operating range for elevated-temperature applications
Applications
• Suitable for high-voltage rail switching in industrial converters • Ideal for power-stage use in motor drives with moderate currents • Used for line-side switching in power supplies and inverters • Can be used for transient suppression and snubber circuits in AC systems
What gate voltage range should I observe for control circuitry?
The device tolerates gate-source voltages up to 30V, so gate drivers should be specified to remain within this maximum to prevent gate degradation.
How does mounting affect thermal performance?
As a surface-mounted TO-252 package, thermal transfer relies on good PCB copper area and thermal vias to dissipate the device’s rated power
insufficient copper will raise junction temperature.
What package pin count and configuration are provided?
The component is supplied in a three-pin TO-252 configuration suitable for standard surface-mount assembly processes.
How should I account for forward conduction behaviour in design?
The reported forward voltage is 1.2V
include this in loss calculations when the body diode conducts during reverse-recovery or synchronous-rectification events.
相關連結
- Vishay SiHD2N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3