Vishay E Type N-Channel Power MOSFET, 2.9 A, 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- RS庫存編號:
- 188-4982
- Distrelec 貨號:
- 304-38-847
- 製造零件編號:
- SIHD2N80AE-GE3
- 製造商:
- Vishay
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TWD406.00
(不含稅)
TWD426.30
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 1,400 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 490 | TWD40.60 | TWD406.00 |
| 500 - 990 | TWD39.30 | TWD393.00 |
| 1000 + | TWD39.00 | TWD390.00 |
* 參考價格
- RS庫存編號:
- 188-4982
- Distrelec 貨號:
- 304-38-847
- 製造零件編號:
- SIHD2N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.25mm | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 2.25mm | ||
Length 6.73mm | ||
Width 6.22mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHD2N80AE-GE3
This power MOSFET is a high-voltage switching device designed for use in industrial and power-conversion contexts. It operates as an enhancement-mode N-channel transistor and is intended for surface-mounted circuit designs where robust voltage handling and controlled switching behaviour are required. The device is supplied in a TO-252 package and meets RoHS environmental standards.
Features and Benefits:
• 800V drain-source capability enables high-voltage switching
• 2.9Ω Rds(on) supports moderate conduction losses
• 62.5W power dissipation allows elevated thermal loading
• 7nC typical gate charge delivers predictable switching energy
• 30V gate rating provides wide gate-drive margin
• 2.9A continuous drain current suits steady-state loads
• 2.9Ω Rds(on) supports moderate conduction losses
• 62.5W power dissipation allows elevated thermal loading
• 7nC typical gate charge delivers predictable switching energy
• 30V gate rating provides wide gate-drive margin
• 2.9A continuous drain current suits steady-state loads
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial switching supplies and auxiliary rails
• Used with gate drivers requiring modest charge budgets
• Can be used for non-automotive high-voltage load switching
• Ideal for industrial switching supplies and auxiliary rails
• Used with gate drivers requiring modest charge budgets
• Can be used for non-automotive high-voltage load switching
What ambient temperature range can it tolerate during operation?
It is rated to function across a wide temperature span from -55°C up to 150°C, accommodating demanding industrial environments.
How does the package influence PCB mounting and the thermal path?
The TO-252 surface-mount package enables compact board placement and provides a direct thermal-conduction route to the PCB copper for heat dissipation.
What gate-drive considerations should be observed for switching performance?
Drive voltages should remain within ±30V limits and be sized to charge the gate with approximately 7nC to achieve the characterised switching behaviour without excessive drive current.
Is this suited to automotive system use?
It is not specified as automotive-grade, so it should not be selected where automotive-specific approvals are required.
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