Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
210-4995
製造零件編號:
SIHU2N80AE-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.9A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Typical Gate Charge Qg @ Vgs

10.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.18mm

Width

6.22 mm

Automotive Standard

No

The Vishay E Series Power MOSFET has IPAK (TO-251) package type.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

相關連結