Vishay E Type N-Channel Power MOSFET, 4.4 A, 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- RS庫存編號:
- 204-7229
- 製造零件編號:
- SIHU5N80AE-GE3
- 製造商:
- Vishay
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TWD397.00
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TWD416.80
(含稅)
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- 加上 20 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD39.70 | TWD397.00 |
| 750 - 1490 | TWD38.90 | TWD389.00 |
| 1500 + | TWD38.00 | TWD380.00 |
* 參考價格
- RS庫存編號:
- 204-7229
- 製造零件編號:
- SIHU5N80AE-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | RoHS | |
| Height | 6.22mm | |
| Width | 2.39mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals RoHS | ||
Height 6.22mm | ||
Width 2.39mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 62.5W Maximum Power Dissipation - SIHU5N80AE-GE3
This power MOSFET is a high-voltage switching device designed for demanding industrial power-conversion and control roles. It operates as an N-channel enhancement-mode transistor and is intended for through-hole PCB mounting in an IPAK package. The component supports elevated-temperature environments and provides a clear gate drive range for robust switching behaviour in power systems.
Features and Benefits:
• 800V drain-to-source rating enables high-voltage switching applications
• 4.4A continuous drain current supports sustained load conduction
• 1.35Ω low Rds(on) reduces conduction losses under load
• 16.5nC typical gate charge permits efficient gate-drive design
• 62.5W maximum power dissipation allows significant heat handling
• 30V maximum gate-source voltage secures gate insulation margin
• 4.4A continuous drain current supports sustained load conduction
• 1.35Ω low Rds(on) reduces conduction losses under load
• 16.5nC typical gate charge permits efficient gate-drive design
• 62.5W maximum power dissipation allows significant heat handling
• 30V maximum gate-source voltage secures gate insulation margin
Applications
• Suitable for high-voltage SMPS primary switching duties
• Ideal for industrial motor-drive inverter front-ends
• Used with boost converters in power-factor circuits
• Can be used for high-voltage relay replacement designs
• Employed in energy-management and power-supply protection
• Ideal for industrial motor-drive inverter front-ends
• Used with boost converters in power-factor circuits
• Can be used for high-voltage relay replacement designs
• Employed in energy-management and power-supply protection
What temperature extremes can it tolerate during operation?
It is rated to function across a range from -55°C to 150°C, permitting use in environments with large thermal variation.
What package and mounting style does it use for PCB assembly?
The device is supplied in an IPAK form and is intended for through-hole mounting to aid thermal conduction to heatsinks.
What forward-voltage characteristic affects conduction at moderate currents?
The component exhibits a forward voltage of 1.2V which is relevant when assessing body-diode conduction and reverse-recovery losses.
Is the product suitable for applications with RoHS requirements?
It conforms to RoHS standards, allowing deployment where restricted-substance compliance is necessary.
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