Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 210-4978
- 製造零件編號:
- SIHD11N80AE-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD95,700.00
(不含稅)
TWD100,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD31.90 | TWD95,700.00 |
| 6000 - 9000 | TWD30.90 | TWD92,700.00 |
| 12000 + | TWD30.00 | TWD90,000.00 |
* 參考價格
- RS庫存編號:
- 210-4978
- 製造零件編號:
- SIHD11N80AE-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 391mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 78W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.2mm | |
| Width | 6.4mm | |
| Standards/Approvals | RoHS | |
| Length | 9.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 391mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 78W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 2.2mm | ||
Width 6.4mm | ||
Standards/Approvals RoHS | ||
Length 9.4mm | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 8A Continuous Drain Current - SIHD11N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement-mode transistor intended for switching and power conversion in industrial electronic systems. It is supplied in a surface-mount TO-252 package and is designed to operate across a wide temperature range suitable for demanding environments. Key electrical limits and thermal handling allow use in circuits requiring elevated voltage tolerance and moderate continuous current capability.
Features and Benefits:
• 800V drain rating enables high-voltage switching applications • 8A continuous drain current supports steady-state load handling • 391mΩ Rds(on) reduces conduction losses for efficiency gains • 28nC typical gate charge minimises switching energy consumption • 78W power dissipation capability aids thermal margin in assemblies
Applications
• Suitable for primary-side switching in SMPS for industrial equipment • Ideal for high-voltage DC-DC conversion stages in power supplies • Used for inverter front-end switching in industrial motor drives • Can be used for snubber or clamp circuits in high-voltage systems
What gate drive considerations are required for reliable switching?
The device can tolerate gate voltages up to 30V, so gate drivers should provide appropriate Vgs levels while limiting transients to prevent overstress.
How does temperature affect allowable operation?
The component is rated to operate from -55°C up to 150°C
designers should account for derating of current and thermal resistance in elevated temperature conditions.
What package and mounting style does it use for PCB design?
It is supplied in a TO-252 surface-mount package with three pins, allowing soldered attachment to board copper and use of PCB thermal land patterns for heat dissipation.
What switching performance trade-offs should be expected?
Its moderate gate charge of 28nC balances switching speed and drive energy, while the relatively high Rds(on) implies higher conduction losses compared with low-resistance devices, which should be considered for efficiency budgets.
相關連結
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