製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF

RS庫存編號:: 688-6995
製造零件編號:: IRFP4110PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF

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可享批量折扣

小計（1 包，共 2 件）*

TWD246.00

(不含稅)

TWD258.30

訂單超過 $1,300.00 免費送貨

有庫存

加上 30 件從 2026年4月20日起發貨
加上 22 件從 2026年4月27日起發貨

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單位	每單位	每包*
2 - 4	TWD123.00	TWD246.00
6 +	TWD114.00	TWD228.00

* 參考價格

RS庫存編號:: 688-6995
製造零件編號:: IRFP4110PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	370W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	15.87mm
	Height	20.7mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 370W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 15.87mm
	Height 20.7mm
	Standards/Approvals No
	Automotive Standard No

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