Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247

RS庫存編號:: 124-9019
製造零件編號:: IRFP4468PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 290 A, 100 V Enhancement, 3-Pin TO-247

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可享批量折扣

小計（1 管，共 25 件）*

TWD3,725.00

(不含稅)

TWD3,911.25

訂單超過 $1,300.00 免費送貨

暫時缺貨

1,750 件從 2026年1月15日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每管*
25 - 25	TWD149.00	TWD3,725.00
50 - 75	TWD145.70	TWD3,642.50
100 +	TWD135.40	TWD3,385.00

* 參考價格

RS庫存編號:: 124-9019
製造零件編號:: IRFP4468PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	290A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	360nC
	Maximum Power Dissipation Pd	520W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	5.31 mm
	Length	15.87mm
	Height	20.7mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 290A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 360nC
	Maximum Power Dissipation Pd 520W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 5.31 mm
	Length 15.87mm
	Height 20.7mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

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