Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247

RS庫存編號:: 124-9014
製造零件編號:: IRFP4110PBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247

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可享批量折扣

小計（1 管，共 25 件）*

TWD2,095.00

(不含稅)

TWD2,199.75

訂單超過 $1,300.00 免費送貨

有庫存

25 件準備從其他地點送貨
加上 400 件從 2026年3月19日起發貨

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單位	每單位	每管*
25 - 25	TWD83.80	TWD2,095.00
50 - 75	TWD82.00	TWD2,050.00
100 +	TWD76.10	TWD1,902.50

* 參考價格

RS庫存編號:: 124-9014
製造零件編號:: IRFP4110PBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	370W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.87mm
	Width	5.31 mm
	Height	20.7mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 370W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.87mm
	Width 5.31 mm
	Height 20.7mm
	Automotive Standard No

COO (Country of Origin):: MX

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