Infineon HEXFET Type N-Channel MOSFET & Diode, 180 A, 100 V Enhancement, 3-Pin TO-247 AUIRFP4110
- RS庫存編號:
- 220-7345
- 製造零件編號:
- AUIRFP4110
- 製造商:
- Infineon
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小計（1 包，共 2 件）*
TWD338.00
(不含稅)
TWD354.90
(含稅)
訂單超過 $1,300.00 免費送貨
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- 280 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 4 | TWD169.00 | TWD338.00 |
| 6 - 10 | TWD164.50 | TWD329.00 |
| 12 + | TWD162.50 | TWD325.00 |
* 參考價格
- RS庫存編號:
- 220-7345
- 製造零件編號:
- AUIRFP4110
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 20.7 mm | |
| Height | 5.31mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 20.7 mm | ||
Height 5.31mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFP4110 specifically designed for Automotive applications, this HEXFET power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
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