Infineon HEXFET Type N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 222-4611
- 製造零件編號:
- AUIRFP4568
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 25 件）*
TWD7,490.00
(不含稅)
TWD7,864.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,075 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 50 | TWD299.60 | TWD7,490.00 |
| 75 - 100 | TWD290.70 | TWD7,267.50 |
| 125 + | TWD282.00 | TWD7,050.00 |
* 參考價格
- RS庫存編號:
- 222-4611
- 製造零件編號:
- AUIRFP4568
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 517W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.31mm | |
| Width | 20.7 mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 517W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.31mm | ||
Width 20.7 mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
相關連結
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247 AUIRFP4568
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-247
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-247 AUIRFP4568-E
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC
- Infineon HEXFET Type N-Channel Power MOSFET 150 V Enhancement, 3-Pin TO-247AC IRFP4568PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-247 IRFP4321PBF
- Infineon HEXFET MOSFET 150 V TO-247