Infineon HEXFET Type N-Channel MOSFET, 186 A, 150 V Enhancement TO-247 IRF150P221AKMA1
- RS庫存編號:
- 258-3956
- 製造零件編號:
- IRF150P221AKMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 25 件）*
TWD4,480.00
(不含稅)
TWD4,704.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD179.20 | TWD4,480.00 |
| 50 + | TWD173.80 | TWD4,345.00 |
* 參考價格
- RS庫存編號:
- 258-3956
- 製造零件編號:
- IRF150P221AKMA1
- 製造商:
- Infineon
規格
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 186A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.50mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 186A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.50mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 186A Continuous Drain Current - IRF150P221AKMA1
This MOSFET is a high-current N-channel switching transistor designed for power electronics applications. It operates as an enhancement-mode device with a drain-source voltage rating suitable for medium-voltage circuits. The component tolerates broad thermal extremes, making it applicable in demanding industrial environments where thermal endurance and efficient conduction are required.
Features and Benefits:
• 4.50mΩ Rds(on) delivering reduced conduction losses
• 186A continuous drain current enabling high-current switching
• 150V Vds supporting medium-voltage power stages
• -55°C to +175°C rating allowing wide temperature operation
• 1.2V forward voltage assisting fast-recovery performance
• 186A continuous drain current enabling high-current switching
• 150V Vds supporting medium-voltage power stages
• -55°C to +175°C rating allowing wide temperature operation
• 1.2V forward voltage assisting fast-recovery performance
Applications
• Suitable for high-current DC-DC converters and supplies
• Ideal for motor drive inverter output stages
• Used with power rectifier assemblies requiring fast recovery
• Can be used for industrial switching in harsh temperatures
• Suitable for surface-mount power-board implementations
• Ideal for motor drive inverter output stages
• Used with power rectifier assemblies requiring fast recovery
• Can be used for industrial switching in harsh temperatures
• Suitable for surface-mount power-board implementations
What package format does it use for board mounting?
It is supplied in a TO-247 package designed for surface-mount attachment.
Is this component compliant with modern hazardous-substances regulation?
It carries RoHS approval indicating restriction of specific hazardous substances.
What channel conduction type should designers expect for gate control?
The device operates in enhancement mode as an N-channel transistor requiring positive gate drive to conduct.
What is the specified maximum temperature for continuous operation?
The upper operating limit is +175°C as specified for high-temperature use.
What is the typical forward voltage associated with recovery events?
The forward voltage for conduction and recovery is specified at 1.2V.
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