Infineon HEXFET Type N-Channel MOSFET, 224 A, 150 V Enhancement TO-247 IRF150P220AKMA1
- RS庫存編號:
- 258-3954
- 製造零件編號:
- IRF150P220AKMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 管，共 25 件）*
TWD5,850.00
(不含稅)
TWD6,142.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 75 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 25 | TWD234.00 | TWD5,850.00 |
| 50 - 50 | TWD227.00 | TWD5,675.00 |
| 75 + | TWD220.20 | TWD5,505.00 |
* 參考價格
- RS庫存編號:
- 258-3954
- 製造零件編號:
- IRF150P220AKMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 224A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 224A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 150V Drain-Source Voltage, 224A Continuous Drain Current - IRF150P220AKMA1
This MOSFET is a high‑power enhancement‑mode N‑channel transistor designed for demanding switching and power conversion roles. It operates across an extended temperature span and is packaged for surface mounting to support heat dissipation and robust handling in power assemblies. RoHS compliance indicates suitability for environments requiring restricted‑substance adherence.
Features and Benefits:
• Low on‑resistance reduces conduction losses and improves efficiency
• High continuous current capability supports heavy‑load switching
• 150V voltage rating enables high‑voltage power stages
• Wide temperature tolerance permits operation in extreme conditions
• Low forward voltage lowers power dissipation in diode conduction
• High continuous current capability supports heavy‑load switching
• 150V voltage rating enables high‑voltage power stages
• Wide temperature tolerance permits operation in extreme conditions
• Low forward voltage lowers power dissipation in diode conduction
Applications
• Suitable for motor drive inverter stages in industrial equipment
• Ideal for high‑current DC‑DC converters and power supplies
• Used with bridge topologies in electric traction systems
• Can be used for high‑power switching in renewable inverters
• Suitable for robust power modules requiring surface mounting
• Ideal for high‑current DC‑DC converters and power supplies
• Used with bridge topologies in electric traction systems
• Can be used for high‑power switching in renewable inverters
• Suitable for robust power modules requiring surface mounting
What is the device’s package type and mounting orientation?
It is supplied in a TO-247 package configured for surface‑mount assembly.
How does thermal range affect deployment in harsh environments?
The rated operating range from -55°C to +175°C permits use where both low‑temperature start‑up and high‑temperature resilience are required.
What channel configuration and gate mode does it use?
It is an N‑channel device operating in enhancement mode, suitable for common low‑side and high‑side switch designs.
What electrical characteristics reduce switching losses during operation?
A maximum drain‑source resistance of 2.70mΩ and a forward diode voltage of 1.2V together reduce conduction and recovery losses under heavy currents.
Is the device compliant with restricted‑substance requirements?
Yes, it meets RoHS requirements for restricted materials.
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