Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- RS庫存編號:
- 281-6028
- Distrelec 貨號:
- 304-42-105
- 製造零件編號:
- IRF840PBF
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 5 件)*
TWD250.00
(不含稅)
TWD262.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 135 件準備從其他地點送貨
- 加上 590 件從 2026年7月03日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD50.00 | TWD250.00 |
| 50 - 95 | TWD45.60 | TWD228.00 |
| 100 - 245 | TWD43.80 | TWD219.00 |
| 250 - 495 | TWD41.00 | TWD205.00 |
| 500 + | TWD36.40 | TWD182.00 |
* 參考價格
- RS庫存編號:
- 281-6028
- Distrelec 貨號:
- 304-42-105
- 製造零件編號:
- IRF840PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF840 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF840 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 8A Continuous Drain Current - IRF840PBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-handling roles in industrial and electronic systems. It operates over a wide ambient range and is supplied in a through-hole TO-220 package for straightforward mounting and heatsinking in control assemblies.
Features and Benefits:
• 500V drain voltage supports high-voltage switching applications
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive
• 8 A continuous drain current enables substantial load drive
• 125W power dissipation allows sustained thermal loading
• 850 mΩ RDS(on) reduces conduction losses under load
• 63 nC typical gate charge offers predictable switching behaviour
• 20V maximum gate-source rating protects the gate from overdrive
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits
• Ideal for industrial motor control stages
• Used for load switching in power distribution modules
• Can be used for laboratory high-voltage test rigs
• Suitable for discrete amplifier and converter circuits
What ambient temperature range can it tolerate in operation?
It operates between -55 °C and 150 °C, allowing use in harsh thermal environments and elevated junction scenarios.
How is it mounted and cooled in a system?
It is supplied in a TO-220AB through-hole package enabling bolted heatsink attachment for efficient thermal management.
What gate drive constraints should designers observe?
Gate drive must remain within ±20V to avoid exceeding the maximum gate-source rating and to preserve device integrity.
How does switching performance relate to gate charge?
The typical 63 nC gate charge gives designers a basis on which to calculate driver current and switching transition times for specified drive voltages.
相關連結
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF Type N-Channel Power MOSFET 400 V Enhancement, 3-Pin TO-220AB IRF720PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF820PBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF820APBF
- Vishay Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840HPBF
- Vishay Single 1 Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRFB13N50APBF
- Vishay D Series Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-220AB
