Vishay IRF840 Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- RS庫存編號:
- 281-6027
- Distrelec 貨號:
- 171-16-205
- 製造零件編號:
- IRF840PBF
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 管，共 1000 件）*
TWD30,700.00
(不含稅)
TWD32,240.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 1000 - 1000 | TWD30.70 | TWD30,700.00 |
| 2000 - 4000 | TWD29.80 | TWD29,800.00 |
| 5000 + | TWD28.90 | TWD28,900.00 |
* 參考價格
- RS庫存編號:
- 281-6027
- Distrelec 貨號:
- 171-16-205
- 製造零件編號:
- IRF840PBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF840 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF840 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay IRF840 Series Power MOSFET, 500V Drain Source Voltage, 125W Power Dissipation - IRF840PBF
This power MOSFET is a high-voltage semiconductor device intended for switching and amplification in power electronics. It operates across a broad temperature span and is supplied in a through-hole TO-220AB package suited to heatsinking. The component is RoHS-compliant and employs an N-channel enhancement topology for controlling drain-source conduction in high-voltage circuits.
Features and Benefits:
• 500V drain-source rating for high-voltage applications
• 8A continuous drain current supports sustained loads
• 125W power dissipation for elevated thermal handling
• 850mΩ Rds(on) balances conduction losses and control simplicity
• 63nC total gate charge enables predictable switching control
• 20V maximum gate-source voltage allows robust gate drive
• 8A continuous drain current supports sustained loads
• 125W power dissipation for elevated thermal handling
• 850mΩ Rds(on) balances conduction losses and control simplicity
• 63nC total gate charge enables predictable switching control
• 20V maximum gate-source voltage allows robust gate drive
Applications
• Suitable for switch-mode power supply output stages
• Used with high-voltage motor drive circuits
• Ideal for industrial inverter switching elements
• Can be used for DC-DC converter high-side transistors
• Used for laboratory power test rigs and prototype boards
• Used with high-voltage motor drive circuits
• Ideal for industrial inverter switching elements
• Can be used for DC-DC converter high-side transistors
• Used for laboratory power test rigs and prototype boards
What ambient temperatures can it tolerate during operation?
It is specified to function from -55°C up to 150°C, allowing use in demanding thermal environments.
How should it be mounted for optimal thermal performance?
The TO-220AB through-hole format is designed for attachment to a heatsink using the tab and fastener to maximise thermal conduction.
What gate drive constraints must designers observe?
Gate-source voltage must not exceed 20V
typical gate drive circuitry should provide controlled transitions to manage the 63nC gate charge.
Are there any automotive-grade assurances for use in vehicles?
It is not listed as an automotive standard device, so designers should assess suitability before vehicle applications.
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