Vishay IRFB Type N-Channel MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220 IRFB11N50APBF
- RS庫存編號:
- 541-1944
- 製造零件編號:
- IRFB11N50APBF
- 製造商:
- Vishay
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可享批量折扣
小計（1 件）*
TWD69.00
(不含稅)
TWD72.45
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 33 件從 2026年2月23日 起發貨
- 加上 569 件從 2026年3月02日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 12 | TWD69.00 |
| 13 - 24 | TWD67.00 |
| 25 + | TWD66.00 |
* 參考價格
- RS庫存編號:
- 541-1944
- 製造零件編號:
- IRFB11N50APBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRFB | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 520mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRFB | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 520mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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