Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820APBF

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TWD1,175.00

(不含稅)

TWD1,234.00

(含稅)

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50 - 50TWD23.50TWD1,175.00
100 - 150TWD23.00TWD1,150.00
200 +TWD22.50TWD1,125.00

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RS庫存編號:
178-0833
製造零件編號:
IRF820APBF
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-220

Series

IRF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Length

10.41mm

Width

4.7 mm

Standards/Approvals

No

Height

9.01mm

Automotive Standard

No

The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.

Operating junction and storage temperature range - 55 to + 150°C

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