Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3
- RS庫存編號:
- 279-9981
- 製造零件編號:
- SISH103DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 包，共 10 件）*
TWD267.00
(不含稅)
TWD280.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,950 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD26.70 | TWD267.00 |
| 50 - 90 | TWD19.70 | TWD197.00 |
| 100 - 240 | TWD17.50 | TWD175.00 |
| 250 - 990 | TWD16.90 | TWD169.00 |
| 1000 + | TWD16.70 | TWD167.00 |
* 參考價格
- RS庫存編號:
- 279-9981
- 製造零件編號:
- SISH103DN-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISH | |
| Package Type | 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0089Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41.6W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISH | ||
Package Type 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0089Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41.6W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
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