Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3
- RS庫存編號:
- 279-9984
- 製造零件編號:
- SISH107DN-T1-GE3
- 製造商:
- Vishay
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小計（1 包，共 10 件）*
TWD222.00
(不含稅)
TWD233.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 5,990 件從 2026年3月24日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD22.20 | TWD222.00 |
| 50 - 90 | TWD16.50 | TWD165.00 |
| 100 - 240 | TWD14.70 | TWD147.00 |
| 250 - 990 | TWD14.40 | TWD144.00 |
| 1000 + | TWD14.10 | TWD141.00 |
* 參考價格
- RS庫存編號:
- 279-9984
- 製造零件編號:
- SISH107DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 34.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | 1212-8 | |
| Series | SISH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Power Dissipation Pd | 26.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 34.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type 1212-8 | ||
Series SISH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Power Dissipation Pd 26.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
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